Electronic structure of SnSb2Te4 and PbSb2Te4 topological insulators

T.V. Menshchikova, S.V. Eremeev, E.V. Chulkov // Applied Surface Science. 2013. V. 267. P. 1-3

Bulk and surface electronic structure of SnBi4Te7 topological insulator

M.G. Vergniory, T.V. Menshchikova, S.V. Eremeev, E.V. Chulkov // Applied Surface Science. 2013. V267. P. 146-149.

Influence of the Ge–Sb sublattice atomic composition on the topological electronic properties of Ge2Sb2Te5

I.V. Silkin, Yu.M. Koroteev, G. Bihlmayer, E.V. Chulkov // Applied Surface Science. V. 267. P. 169-172.

Structure and analysis of atomic vibrations in clusters of Cu (n) (n <= 20)

G. G. Rusina, S. D. Borisova, E. V. Chulkov // Russian Journal of Physical Chemistry A. 2013. V.87. N2. P. 233-239.

Mass enhancement parameter in free-standing ultrathin Pb(111) films: The effect of spin-orbit coupling

I. Yu. Sklyadneva, R. Heid, K.-P.Bohnen, P. M. Echenique, E. V. Chulkov // Phys. Rev. B. 2013. V.87. P. 085440(1-6).

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

I.A.Nechaev, R.C.Hatch, M.Bianchi, D.Guan, C.Friedrich, I.Aguilera, J. L. Mi, B. B. Iversen, S. Blügel, Ph. Hofmann, E. V. Chulkov // Phys. Rev. B. 2013. V.87. P. 121111(R)(1-5)

Peculiarities of structural phase and elastic stress states of superhard TiN-based nanocomposite coatings

A.D. Korotaev, D.P. Borisov, V.Yu. Moshkov, S.V. Ovchinnikov, A.N. Tyumentsev, G.A. Pribytkov. // Physical Mesomechanics.2013. V. 16. N.1. P. 73-83.

Features of the modification of microstructure and properties for copper-doped titanium-nitride coatings

A. D. Korotaev, S.V. Ovchinnikov, V. Yu. Moshkov, S.V. Rabotkin. // Inorganic Materials: Applied Research. 2013. V. 4. N. 2. P. 146-154.

Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides

I.P. Rusinov, I.A. Nechaev, S.V. Eremeev, C. Friedrich, S. Blügel, E.V. Chulkov // Phys. Rev. B. 2013. V.87. P. 205103 (1-5)

Large spin splitting of metallic surface-state bands at adsorbate-modified gold/silicon surfaces

L.V. Bondarenko, D. V. Gruznev, A. A. Yakovlev, A.Y. Tupchaya, D. Usachov, O. Vilkov, A. Fedorov, D. V. Vyalikh, S. V. Eremeev, E. V. Chulkov, A. V. Zotov, A. A. // Scientific Reports. 2013. V.3. P. 01826 (1-6).

Interface-Induced States at the Boundary between a 3D Topological Insulator and a Normal Insulator

V. N. Menshov, V. V. Tugushev, E. V. Chulkov // JETP. Lett. 2013. V.97. P. 258-264.

Peculiarities of the structural phase transformations during annealing of doped titanium-nitride coatings

S.V. Ovchinnikov, A.D. Korotaev, Yu.P. Pinzhin, D.P. Borisov // Russian Physics Journal. 2013. V. 55. N.12. P. 1458-1469.

Фононы на поверхностях металлов и в адсорбционных структурах

Г. Г. Русина, Е. В. Чулков // Успехи химии. 2013. Т.82. N6. С. 483-510.

Phonons on the metal surfaces and in adsorption structures

G.G. Rusina, E.V. Chulkov // Russ Chem Rev. 2013. V. 82. P. 483.

Rashba split surface states in BiTeBr

S. V. Eremeev, I. P. Rusinov, I. A. Nechaev, E. V. Chulkov // New Journal of Physics. 2013.V.15. P. 075015.

Green’s function approach to the lifetimes of image potential resonances at metal surfaces

S. S. Tsirkin, A. G. Borisov, E. V. Chulkov // Phys. Rev. B. 2013. V.88. P. 035449.

Unoccupied topological surface state in Bi2Te2Se

M. Nurmamat, E. E. Krasovskii, K. Kuroda, M. Ye, K. Miyamoto, M. Nakatake, T. Okuda, H. Namatame, M. Taniguchi, E.V. Chulkov, K.A. Kokh, O.E. Tereshchenko, and A. Kimura // Phys. Rev. B. 2013. V. 88. P. 081301(R).

Bulk and surface Rashba splitting in single termination BiTeCl

G. Landolt, S. V. Eremeev,O. E. Tereshchenko, S. Muff, B. Slomski, K. A. Kokh, M. Kobayashi, T. Schmitt, V. N. Strocov, J. Osterwalder, E. V. Chulkov, J Hugo Dil // New Journal of Physics. 2013. V.15. P. 085022.

Effective Processes for Arc-Plasma Treatment in Large Vacuum Chambers of Technological Facilities

D.P. Borisov, N.N. Koval, A. D. Korotaev, V.M. Kuznetsov, V.Y. Romanov, P.A. Terekhov, E.V. Chulkov // Plasma Science, IEEE Transactions on. 2013. V. 41. N8. P. 2183 – 2196.

Circular Dichroism and Superdiffusive Transport at the Surface of BiTeI

J. Mauchain, Y. Ohtsubo, M. Hajlaoui, E. Papalazarou, M. Marsi, A. Taleb-Ibrahimi, J.Faure, K. A. Kokh, O. E. Tereshchenko, S. V. Eremeev, E. V. Chulkov, L. Perfetti // Phys. Rev. Lett. 2013. V.111. P. 126603(1-5).

Visualizing spin-dependent bulk scattering and breakdown of the linear dispersion relation in Bi2Te3

P. Sessi, M. M. Otrokov, T. Bathon, M. G. Vergniory, S. S. Tsirkin, K. A. Kokh, O.E.Tereshchenko, E. V. Chulkov, M. Bode // Phys. Rev. B. 2013.V.88. P. 161407(R).

Quasiparticle band gap in the topological insulator Bi2Te3

I.A. Nechaev, E.V. Chulkov // Phys. Rev. B. 2013. V. 88. P. 165135(1-11).

Динамика решетки BiTeI при высоких давлениях

Ю. C.Поносов, Т. В.Кузнецова, О. Е.Терещенко, К. А. Кох, Е. В. Чулков // Письма ЖЭТФ. 2013. V.98. C. 626-630.

Vibrational spectroscopy and theory of alkali metal adsorption and co-adsorption on single-crystal surfaces

A. Politano, G. Chiarello, G. Benedek, E. V. Chulkov, P. M. Echenique // Surface Science Reports. 2013. V.68. P. 305-389.

Band structure engineering in topological insulator based heterostructures

T. V. Menshchikova, M. M. Otrokov, S. S. Tsirkin, D. A. Samorokov, V. V. Bebneva, A. Ernst, V. M. Kuznetsov, E. V. Chulkov // Nano Letters. 2013. V. 13. P. 6064-6069.

Engineering near-surface electron states in three-dimensional topological insulators

V. N. Men’shov, V. V.Tugushev, E. V.Chulkov // Pis’ma v ZhETF. 2013. V. 98. N. 10. P. 676 – 681.

Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface

S. V. Eremeev, V. N. Men’shov, V. V. Tugushev, P. M. Echenique, E. V. Chulkov // Phys. Rev. B. 2013. V. 88. P. 144430.

Magnetic proximity effect in the three-dimensional topological insulator/ferromagnetic insulator heterostructure

V. N. Men’shov, V. V. Tugushev, S. V. Eremeev, P. M. Echenique, E. V. Chulkov // Phys. Rev. B. 2013. V.88. P. 224401.

Snapshots of Dirac Fermions near the Dirac Point in Topological Insulators

C. W. Luo, H. J. Wang, S. A. Ku, H.-J.Chen, T. T. Yeh, J.-Y. Lin, K. H. Wu,J. Y. Juang, B. L. Young, T. Kobayashi, C.-M.Cheng,C.-H.Chen,K.-D.Tsuei, R. Sankar, F. C. Chou, K. A. Kokh, O. E. Tereshchenko, E. V. Chulkov,Yu. M. Andreev,G. D. Gu // NanoLetters. 2013. V. 13. P.5797−5802.